NdGaO₃ Crystal Substrate

NdGaO₃ crystal is a new single-crystal substrate material developed in recent years. NdGaO₃ (110) substrates are mainly used for high-temperature superconductors (YBCO) and magnetic epitaxial films growth, because NdGaO₃ and YBCO have small lattice mismatch (~0.27%), and no structural phase change at the crystal interface. The (011) plane is also attracting attention as an epitaxial substrate for GaN because its lattice length and symmetry are similar to those of GaN (0001).

Parameter

Physical Properties

Composition	NdGaO₃
Crystal system	Orthorhombic
Crystal structure	Perovskite
Lattice constant	a=0.5431nm, b=0.5499nm, c=0.7710nm
Melting point	1650°C
Density	7.56 g/cm³
Crystal growth method	CZ method
Dielectric constant	20～25 (2°C, 1MHz)
Thermal expansion coefficient	10×10^-6/K

Main Specification

Size	5×5 mm, 10×10 mm, customized sizes are available upon request
Thickness	0.5mm, 1.0mm
Polishing	Single or double side polished
Crystal orientation	(001), (100), (110), (011)
Orientation precision	+/-0.5°
Surface Roughness Ra:	< 0.5 nm (5µm x 5µm area)
Package	Sealed in a class 100 clean bag packed in class 1000 clean room