(La,Sr)(Al,Ta)O₃ Crystal Substrate

LSAT-Lanthanum Strontium Aluminum Tantalum Oxide or (La,Sr)(Al,Ta)O₃ is a mixed perovskite crystal substrate for epitaxial thin films in ferroelectric and high temperature superconductor devices because of its high chemical and thermal stability, and very low electrical conductivity. LAST crystals are grown via the Czochralski method. LSAT’s cubic structure and lattice parameter of 3.868 Å makes it compatible for the epitaxial growth of a wide range of perovskite oxide thin film with a relatively low strain. Furthermore, LSAT is stable in both oxidizing and fairly reducing atmospheres at high temperatures, thus enabling a larger operating window for the processing and growth conditions.

Parameter

Physical and Chemical Properties

Compound Formula	Al₁₀La₃O₅₁Sr₁₄Ta₇
Molecular Weight	3995.82
Appearance	Colorless to light yellow crystal
Melting Point	1840 °C
Boiling Point	N/A
Density	6.74 g/cm³
Solubility in H2O	N/A
Crystal Phase / Structure	Cubic mixed perovskite
Specific Heat	0.57 J/g·°C
Thermal Conductivity	5.1 W/m·K
Thermal Expansion	8.2 10^-6k^-1 (295°K)
Monoisotopic Mass	3999.5896

Main Specification

Size	10×3，10×5，10×10，15×15，20×15，20×20，Ф15,Ф20，Ф1″，Ф2″,Ф2.6″
Thickness	0.5mm，1.0mm
Polishing	Single or double
Crystal Orientation	<100>、<110>、<111>±0.5º
redirection precision	±0.5°
Redirection the edge	2°（special in 1°）
Angle of crystalline	Special size and orientation are available upon request
Ra:	≤5Å（5µm×5µm）