LaAlO₃ Crystal Substrate

LaAlO₃ single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO₃ crystal are well suitable for low loss microwave and dielectric resonance applications. MTI is the largest grower of LaAlO₃ single crystals in the world, and can supply as-grown boules, as-cut blanks and epi-polished substrates up to 3″ diameter. The surface roughness of MTI LaAlO₃ substrate is warranted less than 5A through in house AFM quality control.

Parameter

Physical Properties

Crystal Structure	Pseudo cubic a=3.792 Å
Growth Method	Czochralski
Density	6.52 g/cm³
Melt Point	2080°C
Thermal expansion	10(x10^-6/°C)
Dielectric Constant	~ 25
Loss Tangent at 10 GHz	~3×10^-4@300K, ~0.6×10^-4@77K
Color and Appearance	Tan to Brown based on annealing condition, visible twins on polished substrate
Chemical Stability	Insoluble in mineral acids at 2°C and soluble in H₃PO₃ at>150°C

Main Specification

Crystal orientation	<100><110><111>
Crystal orientation accuracy	+/-0.5 degree
Size	5×5, 10×5, 15×15, 20×15, 20x20mm, D=15,20,1’’,2’’, other sizes are available upon request
Thickness	0.5mm, 1.0mm
Polishing	Single or double side polished
Suface Roughness	<0.5nm(5×5μm area)epi-ready
Package	Sealed in a class 100 clean bag packed in class 1000 clean room