GaSb Crystal Substrate

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. GaSb can be used for Infrared detectors, infrared LEDs, infrared lasers and transistors, and thermophotovoltaic systems.
GaSb as a substrate material can be used for the production of certain infrared lasers and detectors of optical fiber transmission. GaSb is also foreseen with a lattice restriction mobility greater than GaAs, so that it has a potential application in the production of microwave devices.

Parameter

Main Parameters of GaSb crystal substrates and wafers

Single crystal	Dopant	Conductivity type	Carrier concentration (cm^-3)	Mobility(cm²/V·s)	Dislocation density(cm^-2)
GaSb	undoped, intrinsic	P	(1-2)×10¹⁷	600-700	<1×10⁴
GaSb	Zn	P	(5-100)×10¹⁷	200-500	<1×10⁴
GaSb	Te	N	(1-20)×10¹⁷	2000-3500	<1×10⁴

Main Specification

Orientation	<100> / <111> ±0.5°
Standard dimension	20x20x0.5mm, 10x10x0.5mm, 10x5x0.5mm Φ2″x0.5mm, Φ3″x0.6mm,Φ4″x0.8mm Or others upon customer’s requirements
Primary Orientation flat Second Orientation flat	16mm(Φ2″), 22mm(Φ3″), 32.5mm(Φ4″)8mm(Φ2″), 11mm(Φ3″), 16mm(Φ4″)
Surface roughness	Ra<=5A (0.5nm)
Polishing	Single side Polished or Double side polished
TTV / Bow /Warp	TTV <10μm Bow <10μm Warp <15μmTTV <10μm Bow <10μm Warp <15μm
Special specification	We can customize specific specification upon requirements