GaAs Crystal Substrate
GaAs is a semi-conductor material with excellent performance characteristics including direct band gap, high electron mobility, high-frequency low noise, and high conversion efficiency.
GaAs applications cover a large variety of transistors for industry spanning optical fiber communication, wireless networks (WLAN), mobile handsets, blue tooth communications, satellite communications, monolithic microwave integrated circuits (MMIC) for 5G, as well as radio frequency integrated circuits (RFIC).With the development of mini-LED and micro-LED, red light LEDs produced with GaAs substrates are increasingly used for display screens and in AR/VR. The conversion efficiency of a high-efficiency solar-cell panel based on GaAs is up to 40%. At present, such solar-cell panels are widely used in unmanned aerial vehicle and solar auto applications.
Parameter
Crystal structure | Zinc blende |
Lattice constant (300K) | 5.654Å |
Atomic density (300K) | 4.43×1022cm-3 |
Melting point | 1238℃ |
Density (300K) | 5.315g/cm3 |
Linear thermal expansion coeffi cient (300K) | 6.03×10-6K-1 |
Thermal lattice conductivity (300K) | 0.48Wcm-1K-1 |
Specific heat (300K) | 0.325Jg-1K-1 |
Energy gap (300K) | 1.42ev |
Electron mobility (300K) | 8800cm2V-1s-1 |
Hole mobility (300K) | 450cm2V-1s-1 |
Effective electron mass | 0.068 m0 |
Intrinsic electron concentration | 1.8×106 cm-3 |
Intrinsic resistivity (300K) | 3.8×108 Ωcm |
Static electric constant (300K) | 12.85 |
Optic electric constant (300K) | 10.88 |
Elastic constants C11 C44 C12 | 11.88 * 1010Pa 5.49 * 1010Pa 5.38 * 1010Pa |
Mohs hardness | 4.5 |
Vickers hardness for (0.05 .. 1) N | 6.52 * 109Pa |
Surface energy { 100 } { 110 } { 111 } | 220×10-6Jcm-2 150×10-6Jcm-2 130×10-6Jcm-2 |
Growth | LEC/ VGF |
Diameter | Ø 2″ / Ø 3″ / Ø 4″ |
Thickness | 350μm ~ 625μm |
Orientation | <100> / <111> / <110> or others |
Conductivity | P – type / N – type / Semi-insulating |
Dopant | Zn / Si / undoped |
Surface | One side polished or two sides polished |
TTV | ≦ 10μm |
Bow / Warp | ≦ 20μm |
Grade | Epi polished grade / mechanical grade |
- High electron mobility
- High frequency
- High conversion efficiency
- Low power consumption
- Direct band gap
- Light emitting diodes
- Laser diodes
- Photovoltaic devices
- High Electron Mobility Transistor
- Heterojunction Bipolar Transistor
Leave a Reply